View FQH90N15_1241544.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FQH90N15 / FQA90N15 N-Channel Power MOSFET
QFET
FQH90N15 / FQA90N15
N-Channel Power MOSFET Features
* 90A, 150V, RDS(on) = 0.018 @VGS = 10 V * Low gate charge (typical 220 nC) * Low Crss (typical 200 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 175C maximum junction temperature rating
(R)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.
D
!
"
G! GD S
!"
" "
TO-247
FQH Series
TO-3P
G DS
FQA Series
!
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FQH90N15/FQA90N15
150 90 63.5 360 25 1400 90 37.5 6.0 375 2.5 -55 to +175 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.4 -40
Unit
C/W C/W C/W
(c)2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQH90N15 / FQA90N15 Rev. B
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 150V, VGS = 0V VDS = 120V, TC = 150C VGS = 25V, VDS = 0V VGS = -25V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 45A VDS = 40V, ID = 45A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
150 ------
Typ.
-0.15 -----
Max Units
--1 10 100 -100 V V/C A A nA nA
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---0.014 68 4.0 0.018 -V S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---6700 1400 200 8700 1800 260 pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 120V, ID = 90A VGS = 10V
(Note 4, 5) (Note 4, 5)
VDD = 75V, ID = 90A RG = 25
--------
105 760 470 410 220 43 110
220 1500 950 830 285 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25, Starting TJ = 25C 3. ISD 90A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 90A VGS = 0V, IS = 90A dIF/dt =100A/s
(Note 4)
------
---175 0.97
90 360 1.5 ---
A A V ns C
2 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
ID , Drain Current [A]
10
2
10
1
175 C
o
25 C 10
0
o
10
1
-55 C
Notes : 1. VDS = 30V 2. 250s Pulse Test
o
Notes : 1. 250s Pulse Test o 2. TC = 25 C
-1 0 1
10
-1
10
10
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.12
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
10
2
0.09 VGS = 10V 0.06
RDS(on) [],
10
1
VGS = 20V
0.03
o
10
0
175 C 25oC
o
Notes : 1. VGS = 0V 2. 250s Pulse Test
Note : TJ = 25 C
0.00 0 50 100 150 200 250 300
10
-1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
18000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
15000
Crss = Cgd
10
V DS = 30V V DS = 75V
VGS, Gate-Source Voltage [V]
Capacitance [pF]
12000
Ciss Coss
8
VDS = 120V
9000
6
6000
4
Crss
3000
Notes : 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 90 A
0 -1 10
0
10
0
10
1
0
50
100
150
200
250
VDS, Drain-Source Voltage [V]
Q G, Total Gate Charge [nC]
3 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized)
1.1
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. V GS = 10 V 2. ID = 45 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
100
10
3
Operation in This Area is Limited by R DS(on)
80
ID, Drain Current [A]
10
2
1 ms DC 10 ms
ID, Drain Current [A]
100 s
10 s
60
10
1
40
10
0
Notes : o 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
20
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
o
150
175
VDS, Drain-Source Voltage [V]
T C, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
(t), Thermal Response
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z ? JC ( t) = 0 .4
o
C /W M a x . (t)
2 . D u t y F a c t o r , D = t 1 /t 2 3 . T JM - T C = P DM * Z ?
JC
PDM
s in g le p u ls e
JC
10
-2
0 .0 1
t1 t2
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
5 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
6 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
8 FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I14

▲Up To Search▲

Price & Availability of FQH90N15

	To Download FQH90N15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .